, li ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 tttbcs silicon bidirectional thyristors designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. . blocking voltage to 800 volts ? all diffused and glass passivated junctions for greater parameter uniformity and stability ? small, rugged, thermowatt construction for low thermal resistance, high heat dissipation and durability . gate triggering guaranteed in three modes (mac320 series) or four modes (mac320a series) maximum ratings (tc = 25c unless otherwise noted.) mac320 mac320a triacs 20 amperes rms 200 thru 800 volts (to-220ab1 rating peak repetitive off-state voltageo) (tj = -40 to +125c, 1/2 sine wave 50 to 60 hz, gate open) mac320-4, mac320a4 mac320-6, mac320a6 mac320-8, mac320a8 mac320-10, MAC320A10 peak gate voltage on-state current rms (tc = +75c) (full cycle, sine wave, 50 to 60 hz) peak surge current (one full cycle, 60 hz, tc = +75c) preceded and followed by rated current peak gate power (tc = +75c, pulse width = 2 us) average gate power (tc = +75c, t = 8.3 ms) peak gate current operating junction temperature range storage temperature range symbol vdrm vgm 't(rms) pgm tstg value 200 400 600 800 10 20 150 20 0.5 -40 to+125 -40 to+150 unit volts volts amp amp watts watt amp c thermal characteristics characteristic thermal resistance, junction to case symbol r9jc max 1.8 unit c/w 1. vdrm for all types can be applied on a continuous basis. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
mac320 series mac320a series electrical characteristics (tc = 25c unless otherwise noted.) characteristic peak blocking current (vd rated vdrm. gate open) tj = 25c tj = +125c peak on-state voltage (either direction) (ijm = 28 a peak; pulse width = 1 to 2 ms, duty cycle s; 2%) gate trigger current (continuous dc) (main terminal voltage = 12 vdc, rl = 100 ohms) mt2 (+), g(+); mt2 (+), g(-); mt2 (-), g(-) mt2 (-), g(+) "a" suffix only gate trigger voltage (continuous dc) (main terminal voltage = 12 vdc, rl = 100 ohms) mt2 (+), g(+); mt2 (+). g(-); mt2 (-), g(-) mt2 (-), g(+) "a" suffix only (main terminal voltage = rated vdrm. rl = 1 kft, tj =+110c) mt2 (+), g(+); mt2 (-), g(-); mt2 (+), g(-); mt2 (-), g(+) "a" suffix only holding current (either direction) (main terminal voltage = 12 vdc, gate open, initiating current = 200 ma) turn-on time (vd = rated vdrm, itm = 28 a, iqt = 120 ma, rise time = 0.1 (is, pulse width = 2 jis) critical rate of rise of commutation voltage (vd = rated vdrm, 'tm = 28 a, commutating di/dt = 10 a/ms, gate unenergized, tc = +75c) symbol !drm vtm igt vgt ih |
